Comparison of n-type Gd(2)O(3) and Gd-doped HfO(2).

نویسندگان

  • Ya B Losovyj
  • David Wooten
  • Juan Colon Santana
  • Joonhee Michael An
  • K D Belashchenko
  • N Lozova
  • J Petrosky
  • A Sokolov
  • Jinke Tang
  • Wendong Wang
  • Navamoney Arulsamy
  • P A Dowben
چکیده

Gd(2)O(3) and Gd-doped HfO(2) films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd(2)O(3) and Gd-doped HfO(2) films, respectively. In the case of Gd(2)O(3), strong hybridization with the O 2p band is demonstrated, and there is evidence that the Gd 4f weighted band exhibits dispersion in the bulk band structure. The rectifying (diode-like) properties of Gd-doped HfO(2)-silicon and Gd(2)O(3)-silicon heterojunctions are demonstrated.

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عنوان ژورنال:
  • Journal of physics. Condensed matter : an Institute of Physics journal

دوره 21 4  شماره 

صفحات  -

تاریخ انتشار 2009